Analysis and modeling of AlxGa1−xN-based Schottky barrier photodiodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1305838
Reference45 articles.
1. Semiconductor ultraviolet detectors
2. AlxGa1−xN (0⩽x⩽1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition
3. Si-doped AlxGa1-xN photoconductive detectors
4. High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures
5. High-quality visible-blind AlGaN p-i-n photodiodes
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