Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy

Published:2001-11-15 Issue:Part 1, No. 11 Volume:40 Page:6235-6238
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Elsass Christopher R.,Poblenz Christiane,Heying Ben,Fini Paul,Petroff Pierre M.,DenBaars Steven P.,Mishra Umesh K.,Speck James S.,Saxler Adam,Elhamrib Said,Mitchel William C.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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