Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1433164
Reference19 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. GaN: Processing, defects, and devices
3. Optical and Electrical Characteristics of Single-Quantum-Well InGaN Light-Emitting Diodes
4. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
5. Recombination dynamics of localized excitons inIn0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells
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