Spin relaxation time enhancement induced by polarization field screening in an InGaN/GaN quantum well

Author:

Zhang Shixiong12ORCID,Tang Ning134ORCID,Sun Zhenhao1ORCID,Li Guoping1,Fan Teng1ORCID,Fu Lei1ORCID,Zhang Yunfan1,Jiang Jiayang1ORCID,Jin Peng56ORCID,Ge Weikun1,Shen Bo134

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 1 , Beijing 100871, China

2. College of Physics and Electronic Science, Hubei Normal University 2 , Huangshi 435002, China

3. Frontiers Science Center for Nano-optoelectronics & Collaboration Innovation Center of Quantum Matter, Peking University 3 , Beijing 100871, China

4. Peking University Yangtze Delta Institute of Optoelectronics 4 , Nantong, Jiangsu 226010, China

5. Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences 5 , Beijing 100083, China

6. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences 6 , Beijing 100049, China

Abstract

A correlation between the spin-polarized carrier transfer and spin relaxation processes of a two-dimensional electron gas (2DEG) in an InGaN/GaN quantum well (QW) is investigated by time-resolved Kerr rotation spectroscopy at low temperature. Upon resonant excitation with the GaN barrier band edge energy, the spin polarization of the 2DEG in the QW is acquired from the transfer of spin-polarized photoexcited carriers. Significantly, the spin relaxation time of the 2DEG is enhanced to be as long as 1 ns along with the carrier transfer. It is demonstrated that by tailoring the Rashba and Dresselhaus spin–orbit couplings to approach a spin-degenerate surface, the screening effect of the polarization field leads to a longer spin relaxation time and effective manipulation of the spin relaxation. The polarization field screening induced enhancement of the spin relaxation time is significant in the way for the development of GaN-based spintronic devices.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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