Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires-Reference-Cited by-同舟云学术

Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires

Published:2017-06-01 Issue:1 Volume:8 Page:
ISSN:2041-1723
Container-title:Nature Communications
language:en
Short-container-title:Nat Commun

Author:

Park Tae-Eon,Park Youn Ho,Lee Jong-Min,Kim Sung Wook,Park Hee Gyum,Min Byoung-Chul^ORCID,Kim Hyung-jun,Koo Hyun Cheol,Choi Heon-Jin,Han Suk Hee,Johnson Mark,Chang Joonyeon

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

Link

http://www.nature.com/articles/ncomms15722.pdf

Reference46 articles.

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2. Wunderlich, J. et al. Spin Hall effect transistor. Science 330, 1801–1804 (2010).

3. Ciorga, M. et al. Electrical spin injection and detection in lateral all-semiconductor devices. Phys. Rev. B 79, 165321 (2009).

4. Koo, H. C. et al. Control of spin precession in a spin-injected field effect transistor. Science 325, 1515–1518 (2009).

5. Choi, W. Y. et al. Electrical detection of coherent spin precession using the ballistic intrinsic spin Hall effect. Nat. Nanotechnol. 10, 666–670 (2015).

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