Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg-Reference-Cited by-同舟云学术

Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg

Published:2021-11-01 Issue:18 Volume:119 Page:182106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shima K.¹^ORCID,Tanaka R.²^ORCID,Takashima S.²^ORCID,Ueno K.²,Edo M.²,Kojima K.¹^ORCID,Uedono A.³^ORCID,Ishibashi S.⁴^ORCID,Chichibu S. F.¹^ORCID

Affiliation:

1. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan

2. Advanced Technology Laboratory, Fuji Electric Co., Ltd., Hino, Tokyo 191-8502, Japan

3. Division of Applied Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

4. Research Center for Computational Design of Advanced Functional Materials, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0066347

Reference60 articles.

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4. Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure

5. D. Shibata , R. Kajitani , M. Ogawa , K. Tanaka , S. Tamura , T. Hatsuda , M. Ishida , and T. Ueda , in IEDM Technical Diges ( IEEE, 2016), p. 248.

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