Author:
Usov I. O.,Suvorova A. A.,Kudriavtsev Y. A.,Suvorov A. V.
Subject
General Physics and Astronomy
Cited by
10 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Research on dopant distribution of multi-energy boron implantations into c-SiC;2022 23rd International Conference on Electronic Packaging Technology (ICEPT);2022-08-10
2. Deeper insight into lifetime-engineering in 4H-SiC by ion implantation;Journal of Applied Physics;2019-07-28
3. Diffusion in Semiconductors;Springer Handbook of Electronic and Photonic Materials;2017
4. Energy filter for tailoring depth profiles in semiconductor doping application;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-12
5. Surface passivation and isochronal annealing studies on n-type 4H-SiC epitaxial layer;Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVII;2015-09-04