Suppressed diffusion of implanted boron in 4H–SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123828
Reference19 articles.
1. Homoepitaxial VPE Growth of SiC Active Layers
2. Silicon Carbide Epitaxy in a Vertical CVD Reactor: Experimental Results and Numerical Process Simulation
3. Diffusion of nitrogen into silicon carbide single crystals doped with aluminum
4. Doping of SiC by Implantation of Boron and Aluminum
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