Deeper insight into lifetime-engineering in 4H-SiC by ion implantation
Author:
Affiliation:
1. Fraunhofer Institute for Integrated Systems and Device Technology IISB, Schottkystr. 10, 91058 Erlangen, Germany
2. Chair of Electron Devices, Friedrich-Alexander University Erlangen-Nürnberg, Cauerstr. 6, 91058 Erlangen, Germany
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5092429
Reference22 articles.
1. Updated trade-off relationship between specific on-resistance and breakdown voltage in 4H-SiC{0001} unipolar devices
2. Fundamentals of Silicon Carbide Technology
3. Lifetime-limiting defects in n− 4H-SiC epilayers
4. The influence of growth conditions on carrier lifetime in 4H–SiC epilayers
5. Formation of the Z1,2 deep-level defects in 4H-SiC epitaxial layers: Evidence for nitrogen participation
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