Nitrogen Ion Implantation into 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes-Reference-Cited by-同舟云学术

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Nitrogen Ion Implantation into 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes

Published:1995-06-15 Issue:Part 1, No. 6A Volume:34 Page:3036-3042
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yaguchi Seiji,Kimoto Tsunenobu,Ohyama Naoki,Matsunami Hiroyuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Short Channel Self-Alignment Process for High-Voltage VDMOSFETs in 4H-SiC;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

2. The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors;Acta Physica Polonica A;2019-12

3. (Invited) Challenges for Ion Implantation in Power Device Processing;ECS Transactions;2017-04-26

4. Device Processing of Silicon Carbide;Fundamentals of Silicon Carbide Technology;2014-09-26

5. Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC;Journal of Applied Physics;2009-07

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