Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3159901
Reference26 articles.
1. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy
2. Deep level defects in electron-irradiated 4H SiC epitaxial layers
3. Deep levels created by low energy electron irradiation in 4H-SiC
4. Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons
5. Photoluminescence and transport studies of boron in 4H SiC
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