Ion-channeling analysis of As relocation in heavily doped Si:As irradiated with high-energy ions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1616632
Reference20 articles.
1. Defect distribution in ion-implanted silicon. A Monte Carlo simulation
2. Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
3. Vacancy effects in transient diffusion of Sb induced by ion implantation of Si+ and As+ ions
4. Retardation of boron diffusion in silicon by defect engineering
5. Effect of vacancy and interstitial excess on the deactivation kinetics of As in Si
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. RBS-channeling analysis of ion-irradiation effects in heavily-doped Si:As;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-04
2. Ab initiostructures ofAsmVcomplexes and the simulation of Rutherford backscattering channeling spectra in heavily As-doped crystalline silicon;Physical Review B;2005-12-23
3. Atomistic simulation of ion channeling in heavily doped Si:As;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-04
4. Damage and recovery in doped SOI layers after high energy implantation;Materials Science and Engineering: B;2004-12
5. Damage and recovery in arsenic doped silicon after high energy Si+ implantation;Journal of Applied Physics;2004-10
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