Atomistic simulation of ion channeling in heavily doped Si:As
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference23 articles.
1. Laser–Solid Interactions and Laser Processing – 1978;Chu,1980
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3. Annealing of Heavily Arsenic-Doped Silicon: Electrical Deactivation and a New Defect Complex
4. Backscattering spectrometry and ion channeling studies of heavily implanted As+in silicon
5. Identification of Vacancy-Impurity Complexes in Highlyn-Type Si
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