RBS-channeling analysis of ion-irradiation effects in heavily-doped Si:As-Reference-Cited by-同舟云学术

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RBS-channeling analysis of ion-irradiation effects in heavily-doped Si:As

Published:2007-04 Issue:1-2 Volume:257 Page:253-256
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Lulli G.,Bianconi M.,Ferri M.,Fortunato G.,Mariucci L.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

1. Beam Effects in the Analysis of As‐Doped Silicon by Channeling Measurements

2. Channeling measurements in As‐doped Si

3. Damage production and arsenic displacement in silicon by proton and helium irradiation

4. Ion-channeling analysis of As relocation in heavily doped Si:As irradiated with high-energy ions

5. Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Azimuthal dependence and accurate determination of the half-angle in RBS channeling;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-10

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