Retardation of boron diffusion in silicon by defect engineering
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1361280
Reference11 articles.
1. Point defects and dopant diffusion in silicon
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4. Ion-induced damage and amorphization in Si
5. A Monte Carlo computer program for the transport of energetic ions in amorphous targets
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