Species and dose dependence of ion implantation damage induced transient enhanced diffusion
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.361162
Reference31 articles.
1. Transient enhanced diffusion of dopants in silicon induced by implantation damage
2. Implantation damage and the anomalous transient diffusion of ion‐implanted boron
3. Retarded and enhanced dopant diffusion in silicon related to implantation‐induced excess vacancies and interstitials
4. Some aspects of damage annealing in ion‐implanted silicon: Discussion in terms of dopant anomalous diffusion
5. Influence of implant induced vacancies and interstitials on boron diffusion in silicon
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