Silicon self‐interstitial properties deduced from platinum profiles after annealing with controlled cooling-Reference-Cited by-同舟云学术

Silicon self‐interstitial properties deduced from platinum profiles after annealing with controlled cooling

Published:2017-06-07 Issue:7 Volume:214 Page:1700207
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Johnsson Anna¹,Pichler Peter¹²,Schmidt Gerhard³

Affiliation:

1. Fraunhofer Institute for Integrated Systems and Device TechnologySchottkystrasse 10, 91058 ErlangenGermany

2. Chair of Electron DevicesUniversity of Erlangen–NurembergCauerstrasse 6, 91058 ErlangenGermany

3. Infineon Technologies Austria AGSiemensstrasse 2, 9500 VillachAustria

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201700207

Reference22 articles.

1. H.Zimmermann Messung und Modellierung von Gold‐ und Platinprofilen PhD Thesis University of Erlangen‐Nuremberg (1991).

2. Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments

3. F.Quast Untersuchung von Punktdefekten inSilicium mit Hilfe der Platindiffusion PhD Thesis University of Erlangen‐Nuremberg (2001).

4. Modeling platinum diffusion in silicon

5. P.Pichler Intrinsic Point Defects Impurities and Their Diffusion in Silicon (Springer Wien‐New York 2004) pp.58–59and pp.136–140.

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