A Review of Platinum Diffusion in Silicon and Its Application for Lifetime Engineering in Power Devices

Author:

Johnsson Anna1,Schmidt Gerhard2,Hauf Moritz3,Pichler Peter14ORCID

Affiliation:

1. Fraunhofer Institute for Integrated Systems and Device Technology 91058 Erlangen Germany

2. Infineon Technologies Austria AG 9500 Villach Austria

3. Infineon Technologies AG 85579 Munich Germany

4. Chair of Electron Devices University of Erlangen-Nuremberg 91058 Erlangen Germany

Funder

Fraunhofer-Gesellschaft

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference53 articles.

1. Gettering mechanisms in silicon

2. Kinetics and thermodynamics constraints in Pt gettering by P diffusion in Si

3. Semiconductor Power Devices

4. J.Lutz U.Scheuermann inProc. of the Twenty-Eighth Inter. Power Conversion Conf. (PCIM’94) ZM communications GMBH cop. Nürnberg Germany1994 pp.163–169.

5. R.Siemieniec M.Netzel W.Südkamp J.Lutz inProc. of the Inter. Conf. on Industrial Electronics Technology and Automation (IETA) Electronics Research Institute Cairo Egypt2001.

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