Measurement of the PtH defect depth profiles in fully processed silicon high-voltage diodes by improved current transient spectroscopy
Author:
Affiliation:
1. KAI Kompetenzzentrum Automobil- und Industrieelektronik GmbH,Villach,Austria
2. Infineon Technologies AG,Villach,Austria
3. Friedrich-Alexander University Erlangen-Nürnberg (FAU),Erlangen,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813648.pdf?arnumber=9813648
Reference12 articles.
1. Tailoring of field-stop layers in power devices by hydrogen-related donor formation
2. Defect distribution in MeV proton irradiated silicon measured by high-voltage current transient spectroscopy
3. The Modeling of Platinum Diffusion in Silicon under Non‐equilibrium Conditions
4. Annealing of Pt‐H Defects in High‐Voltage Si p+/n− Diodes
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