Annealing of Pt‐H Defects in High‐Voltage Si p+/n− Diodes

Author:

Rasinger Fabian12ORCID,Prohinig Jennifer13,Schulze Holger4,Schulze Hans-Joachim5,Pobegen Gregor1

Affiliation:

1. KAI Kompetenzzentrum Automobil- und Industrieelektronik GmbH 9524 Villach Austria

2. Lehrstuhl für Angewandte Physik, Department PhysikFriedrich-Alexander University Erlangen-Nürnberg 91058 Erlangen Germany

3. Institute of Solid State PhysicsUniversity of Technology 8010 Graz Austria

4. Infineon Technologies Austria AG 9500 Villach Austria

5. Infineon Technologies AG 85579 Neubiberg Germany

Funder

Österreichische Forschungsförderungsgesellschaft

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. E.Badr P.Pichler G.Schmidt inPh. D. Research in Microelectronics and Electronics (PRIME) 2013 9th Conf. on IEEE2013 pp.253–256.

2. Modeling platinum diffusion in silicon

3. Silicon self‐interstitial properties deduced from platinum profiles after annealing with controlled cooling

4. M.Hauf C.Sandow F. J.Niedernostheide G.Schmidt in2018 IEEE 30th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD) IEEE2018 pp.120–123.

5. Similarities in the electrical properties of transition metal–hydrogen complexes in silicon

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Modeling of carrier lifetime based on Deep-Level Transient Spectroscopy for power PIN diodes;2022 IEEE International Conference on Electrical Sciences and Technologies in Maghreb (CISTEM);2022-10-26

2. Measurement of the PtH defect depth profiles in fully processed silicon high-voltage diodes by improved current transient spectroscopy;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22

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