A high sensitivity microbeam RBS setup for heavy elements implantation profiles analysis

Author:

Boussahoul F.,Jakšić M.,Provatas G.,Maouche D.

Funder

Università degli Studi di Torino

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference35 articles.

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2. Ultrahigh sensitivity SIMS analysis of oxygen in silicon;Jakiela;Surf. Interface Anal.,2018

3. S. Meyer, S. Richter, M. Balski, C. Hagendorf, Trace element analysis in crystalline silicon, in Photovoltaics International journal, 2011, no. November, pp. 34–39. [Online]. Available: https://www.researchgate.net/publication/259838827_Trace_Element_Analysis_in_Crystalline_Silicon.

4. Depth profiles of a shallow implanted layer in a Si wafer determined by different methods of thin-layer analysis;Klockenkämper;Spectrochim. Acta - Part B Atomic Spectroscopy,2002

5. Ultra-trace analysis of metallic contaminations on silicon wafer surfaces by vapour phase decomposition/total reflection X-ray fluorescence (VPD/TXRF);Neumann;Spectrochim. Acta B at. Spectrosc.,1991

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