Vacancy effects in transient diffusion of Sb induced by ion implantation of Si+ and As+ ions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373564
Reference24 articles.
1. Transient Phosphorus Diffusion Below the Amorphization Threshold
2. Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the “+1” model
3. Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the “+1” model
4. Some aspects of damage annealing in ion‐implanted silicon: Discussion in terms of dopant anomalous diffusion
5. Transient enhanced diffusion of Sb and B due to MeV silicon implants
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2. Effect of excess vacancy concentration on As and Sb doping in Si;Journal of Physics D: Applied Physics;2009-07-31
3. Damage and recovery in boron doped silicon on insulator layers after high energy Si+ implantation;Journal of Applied Physics;2006-08
4. Effect of germanium pre-amorphization on solid-phase epitaxial regrowth of antimony and arsenic ion-implanted silicon;Materials Science and Engineering: B;2004-12
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