Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the “+1” model
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121963
Reference11 articles.
1. Transient Phosphorus Diffusion Below the Amorphization Threshold
2. Modeling Silicon Implantation Damage and Transient Enhanced Diffusion Effects for Silicon Technology Development
3. Implantation and transient B diffusion in Si: The source of the interstitials
4. Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena
5. Reduction of transient diffusion from 1–5 keV Si+ ion implantation due to surface annihilation of interstitials
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