Transient enhanced diffusion of Sb and B due to MeV silicon implants
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119150
Reference12 articles.
1. Species and dose dependence of ion implantation damage induced transient enhanced diffusion
2. Implantation and transient B diffusion in Si: The source of the interstitials
3. Implant damage and transient enhanced diffusion in Si
4. Diffusion and interactions of point defects in silicon: molecular dynamics simulations
5. The diffusion of antimony in heavily doped and n- and p-type silicon
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