Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the “+1” model
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367489
Reference13 articles.
1. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
2. Transient Phosphorus Diffusion Below the Amorphization Threshold
3. Species and dose dependence of ion implantation damage induced transient enhanced diffusion
4. The interstitial fraction of diffusivity of common dopants in Si
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1. Analysis of NMOS and PMOS Difference in $V_{T}$ Variation With Large-Scale DMA-TEG;IEEE Transactions on Electron Devices;2009-09
2. Extended defects in shallow implants;Applied Physics A: Materials Science & Processing;2003-05-01
3. Annealing behaviour of boron implanted defects in Si detector: impact on breakdown performance;The European Physical Journal Applied Physics;2002-03
4. Thermal Evolution of Extrinsic Defects in Ion Implanted Silicon: Current Understanding and Modelling;MRS Proceedings;2002
5. Modeling of vacancy cluster formation in ion implanted silicon;Journal of Applied Physics;2001-05
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