Self-heating induced instability of oxide thin film transistors under dynamic stress-Reference-Cited by-同舟云学术

Self-heating induced instability of oxide thin film transistors under dynamic stress

Published:2016-01-11 Issue:2 Volume:108 Page:023501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kise Kahori,Fujii Mami N.^ORCID,Urakawa Satoshi,Yamazaki Haruka,Kawashima Emi,Tomai Shigekazu,Yano Koki,Wang Dapeng,Furuta Mamoru,Ishikawa Yasuaki^ORCID,Uraoka Yukiharu

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4939861

Reference20 articles.

1. Liquid crystal matrix displays

2. Technical Development toward Implementation of Ultra High-Definition TV System

3. Invited Paper: Super Hi-Vision projection display for next-generation TV

4. The asymmetrical degradation behavior on drain bias stress under illumination for InGaZnO thin film transistors

5. Photoelectric heat effect induce instability on the negative bias temperature illumination stress for InGaZnO thin film transistors

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