Interfacial thermal resistance effect in self-aligned top-gate a-IGZO thin film transistors-Reference-Cited by-同舟云学术

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Interfacial thermal resistance effect in self-aligned top-gate a-IGZO thin film transistors

Published:2024-09 Issue: Volume:65 Page:91-95
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Na Junhong^ORCID

Publisher

Elsevier BV

Reference33 articles.

1. A device-to-system perspective regarding self-heating enhanced hot carrier degradation in modern field-effect transistors: a topical review;Alam;IEEE Trans. Electron. Dev.,2019

2. Impact of self-heating effect on transistor characterization and reliability issues in sub-10 nm technology nodes;Zhao;IEEE J. Electron Devices Soc.,2019

3. A novel heat dissipation structure for inhibiting hydrogen diffusion in top-gate a-InGaZnO TFTs;Chen;IEEE Electron. Device Lett.,2019

4. Effect of channel thickness on electrical performance of amorphous IGZO thin-film transistor with atomic layer deposited alumina oxide dielectric;Li;Curr. Appl. Phys.,2014

5. Room-temperature flexible thin film transistor with high mobility;Hsu;Curr. Appl. Phys.,2013

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