Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memories-Reference-Cited by-同舟云学术

Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memories

Published:2012-04-02 Issue:14 Volume:100 Page:142102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

De Stefano F.,Houssa M.,Kittl J. A.,Jurczak M.,Afanas’ev V. V.,Stesmans A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3696672

Reference21 articles.

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3. The missing memristor found

4. On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO[sub 2]\Pt Memory Systems

5. Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide

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