Impact of vacuum on the resistive switching in HfO2-based conductive-bridge RAM with highly-doped silicon bottom electrode-Reference-Cited by-同舟云学术

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Impact of vacuum on the resistive switching in HfO2-based conductive-bridge RAM with highly-doped silicon bottom electrode

Published:2021-09 Issue: Volume:271 Page:115267
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Humood Khaled,Saylan Sueda,Abi Jaoude Maguy,Mohammad Baker,Ravaux Florent

Funder

Khalifa University of Science and Technology

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference91 articles.

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2. An efficient heterogeneous memristive xnor for in-memory computing;Abu Lebdeh;IEEE Transactions on Circuits and Systems I: Regular Papers,2017

3. Towards oxide electronics: A roadmap;Coll;Applied Surface Science,2019

4. T. Li X. Bi N. Jing X. Liang L. Sneak-path based test and diagnosis for 1R RRAM crossbar using voltage bias technique, 2017 54th ACM/EDAC/IEEE Design Automation Conference (DAC). https://doi.org/10.1145/3061639.3062318.

5. Stateful memristor-based search architecture;Halawani;IEEE Transactions on Very Large Scale Integration (VLSI) Systems,2018

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1. HfO₂-Based Memristors for Gamma-Ray Detection: An Experimental and Computational Investigation;IEEE Sensors Journal;2024-02-01

2. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications;ACS Applied Electronic Materials;2023-12-29

3. HfAlO-based ferroelectric memristors for artificial synaptic plasticity;Frontiers of Physics;2023-09-20

4. Enhanced resistive switching performance of hafnium oxide-based devices: Effects of growth and annealing temperatures;Journal of Alloys and Compounds;2022-08

5. A Low-Cost, Nanowatt, Millimeter-Scale Memristive-Vacuum Sensor;IEEE Sensors Journal;2022-03-15

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