A physical model for bipolar oxide-based resistive switching memory based on ion-transport-recombination effect
Author:
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3599490
Reference16 articles.
1. Resistive switching in transition metal oxides
2. Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap
3. Unipolar Switching Behaviors of RTO $\hbox{WO}_{X}$ RRAM
4. Nanoionics-based resistive switching memories
5. Electrical observations of filamentary conductions for the resistive memory switching in NiO films
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