Author:
Ji Hyeonseung,Lee Yoonseok,Heo Jungang,Kim Sungjun
Funder
Korea Institute of Energy Technology Evaluation and Planning
Ministry of Trade, Industry and Energy
Ministry of Science, ICT and Future Planning
National Research Foundation of Korea
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference61 articles.
1. Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications;Ielmini;J. Comput. Electron.,2017
2. Neuromorphic silicon neurons and large-scale neural networks: challenges and opportunities;Poon;Front. Neurosci.,2011
3. Functional applications of future data storage devices;Yang;Adv. Electron. Mater.,2021
4. Jagadhane, K.S., Dongale, T.D., Nikam, A.S., Tadavalekar,N.B., Kamat, R.K.; Kolekar, G.B., Anbhule P.V. Tetraphenylethene Carbothioamide-Based Organic Stimuli-Responsive Mechanochromic Memristive Devices with Non-Volatile Memory and Synaptic Learning Functionalities. ChemistySelect, 8, e202300026.
5. Binary metal oxide-based resistive switching memory devices: a status review;Patil;Mater. Comm.,2023
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