Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications

Published:2017-11-13 Issue:4 Volume:16 Page:1121-1143
ISSN:1569-8025
Container-title:Journal of Computational Electronics
language:en
Short-container-title:J Comput Electron

Author:

Ielmini D.^ORCID,Milo V.

Funder

European Research Council

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1007/s10825-017-1101-9/fulltext.html

Reference60 articles.

1. Waser, R., Aono, M.: Nanoionics-based resistive switching memories. Nat. Mater. 6, 833–840 (2007). https://doi.org/10.1038/nmat2023

2. Wong, H.-S.P., Lee, H.-Y., Yu, S., Chen, Y.-S., Wu, Y., Chen, P.-S., Lee, B., Chen, F.T., Tsai, M.-J.: Metal-oxide RRAM. Proc. IEEE 100(6), 1951–1970 (2012). https://doi.org/10.1109/JPROC.2012.2190369

3. Yang, J.J., Strukov, D.B., Stewart, D.R.: Memristive devices for computing. Nat. Nanotechnol. 8, 13–24 (2013). https://doi.org/10.1038/NNANO.2012.240

4. Ielmini, D.: Resistive switching memories based on metal oxides: mechanisms, reliability and scaling. Semicond. Sci. Technol. 31(6), 063002 (2016). https://doi.org/10.1088/0268-1242/31/6/063002

5. Strukov, D.B., Snider, G.S., Stewart, D.R., Williams, R.S.: The missing memristor found. Nature 453, 80–83 (2008). https://doi.org/10.1038/nature06932

Cited by 51 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research progress of artificial neural systems based on memristors;Materials Today Nano;2024-03

2. Filament-free memristors for computing;Nano Convergence;2023-12-19

3. Improved resistive and synaptic switching performances in bilayer ZrOx/HfOx devices;Journal of Alloys and Compounds;2023-11

4. PBA: Percentile-Based Level Allocation for Multiple-Bits-Per-Cell RRAM;2023 IEEE/ACM International Conference on Computer Aided Design (ICCAD);2023-10-28

5. Analysis and Modeling of Bipolar Resistive Switching in 2-D Graphene Electrode- Based Memristor;IEEE Transactions on Electron Devices;2023-10

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3