Understanding the Behavior of Oxygen Vacancies in an SrFeOx/Nb:SrTiO3 Memristor-Reference-Cited by-同舟云学术

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Understanding the Behavior of Oxygen Vacancies in an SrFeOx/Nb:SrTiO3 Memristor

Published:2022-01-21 Issue:2 Volume:18 Page:168-175
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:en
Short-container-title:Electron. Mater. Lett.

Author:

Kim Hyoung Gyun,Nallagatla Ventaka Raveendra,Jung Chang Uk,Park Gyeong-Su,Kwon Deok-Hwang,Kim Miyoung

Funder

National Research Foundation of Korea

Hankuk University of Foreign Studies

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s13391-021-00334-4.pdf

Reference35 articles.

1. Waser, R., Dittmann, R., Staikov, G., Szot, K.: Redox-based resistive switching memories - nanoionic mechanisms, prospects, and challenges. Adv. Mater. (2009). https://doi.org/10.1002/adma.200900375

2. L., Wang C.-H., Yang J., Wen.: Physical principles and current status of emerging non-volatile solid state memories. Electron. Mater. Lett. 11(4), 505–543 (2015). https://doi.org/10.1007/s13391-015-4431-4

3. Gupta, V., Kapur, S., Saurabh, S., Grover, A.: Resistive random access memory: a review of device challenges. IETE Tech. Rev. 37, 377 (2019)

4. Bo, Qu Adnan, Younis Dewei, Chu.: Recent progress in tungsten oxides based memristors and their neuromorphological applications. Electron. Mater. Lett. 12(6), 715–731 (2016). https://doi.org/10.1007/s13391-016-6129-7

5. Sawa, A.: Resistive switching in transition metal oxides. Mater. Today (2008). https://doi.org/10.1016/s1369-7021(08)70119-6

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anodic Niobium–Titanium Oxide Crossbar Memristor Arrays for pH Sensing in Liquids;physica status solidi (a);2024-02-04

2. Improved oxygen ion migration efficiency and resistive switching properties in SrFeOx memristor with vertical superlattice-like structure;Ceramics International;2024-01

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