Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide-Reference-Cited by-同舟云学术

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Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide

Published:2007-04-24 Issue:4B Volume:46 Page:2175-2179
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Heng-Yuan,Chen Pang-Shiu,Wang Ching-Chiun,Maikap Siddheswar,Tzeng Pei-Jer,Lin Cha-Hsin,Lee Lurng-Shehng,Tsai Ming-Jinn

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference6 articles.

1. Not just a load of bolometers

2. Identification of a determining parameter for resistive switching of TiO2 thin films

3. Giant and Stable Conductivity Switching Behaviors in ZrO2Films Deposited by Pulsed Laser Depositions

4. Conductivity switching characteristics and reset currents in NiO films

5. High-performance nonhydrogenated nickel-induced laterally crystallized P-channel poly-Si TFTs

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5. Dual‐Mode Operation of Epitaxial Hf_0.5Zr_0.5O₂: Ferroelectric and Filamentary‐Type Resistive Switching;physica status solidi (a);2023-11-22

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