Type II recombination and band offset determination in a tensile strained InGaAs quantum well
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119140
Reference21 articles.
1. Optical investigations of the band structure of strained InAs/AlInAs quantum wells
2. Virtual‐surfactant epitaxy of strained InAs/Al0.48In0.52As quantum wells
3. Photoreflectance studies of lattice‐matched and strained InGaAs/InAlAs single quantum wells
4. Optical transitions in strained In/sub 0.53/Ga/sub 0.47/As/In/sub 1-x/Ga/sub x/As quantum wells
5. Efficient polarization insensitive electroabsorption modulator using strained InGaAsP‐based quantum wells
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2. Deep donor-acceptor pair recombination in InGaAs-based heterostructures grown on InP substrates;Journal of Applied Physics;2005-11
3. Growth and properties of GaAsSb/InP and GaAsSb/InAlAs superlattices on InP;Journal of Crystal Growth;2003-02
4. Evidence for type I band alignment in GaNAs/GaAs quantum structures by optical spectroscopies;Physica E: Low-dimensional Systems and Nanostructures;2002-03
5. Band offsets of Al[sub x]Ga[sub 1−x]SbAs/InGaAs heterojunctions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
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