Deep donor-acceptor pair recombination in InGaAs-based heterostructures grown on InP substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2126153
Reference18 articles.
1. Recombination lifetimes in undoped, low-band gap InAsyP1−y/InxGa1−xAs double heterostructures grown on InP substrates
2. Recent Advances in Low-Bandgap, InP-Based GaInAs/InAsP Materials and Devices for Thermophotovoltaic (TPV) Energy Conversion
3. Defect-related density of states in low-band gap InxGa1−xAs/InAsyP1−y double heterostructures grown on InP substrates
4. Temperature dependence of nonradiative recombination in low-band gap InxGa1−xAs/InAsyP1−y double heterostructures grown on InP substrates
5. Photoluminescence and Lattice Mismatch in InGaAs/InP
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