Recombination lifetimes in undoped, low-band gap InAsyP1−y/InxGa1−xAs double heterostructures grown on InP substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1350432
Reference9 articles.
1. GaxIn1−xAs thermophotovoltaic converters
2. Minority‐carrier properties of GaAs on silicon
3. Recombination lifetime of InxGa1−xAs ternary alloys
4. Statistics of the Recombinations of Holes and Electrons
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