Temperature dependence of nonradiative recombination in low-band gap InxGa1−xAs/InAsyP1−y double heterostructures grown on InP substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1586468
Reference17 articles.
1. Recombination lifetimes in undoped, low-band gap InAsyP1−y/InxGa1−xAs double heterostructures grown on InP substrates
2. Defect-related density of states in low-band gap InxGa1−xAs/InAsyP1−y double heterostructures grown on InP substrates
3. Electron-Hole Recombination in Germanium
4. Electron-Hole Recombination in Germanium
5. The case for Auger recombination in In1−xGaxAsyP1−y
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