Evidence for type I band alignment in GaNAs/GaAs quantum structures by optical spectroscopies-Reference-Cited by-同舟云学术

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Evidence for type I band alignment in GaNAs/GaAs quantum structures by optical spectroscopies

Published:2002-03 Issue:2-4 Volume:13 Page:1074-1077
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Buyanova I.A.,Pozina G.,Hai P.N.,Chen W.M.,Xin H.P.,Tu C.W.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Composition dependence of interband transition intensities in GaPN, GaAsN, and GaPAs alloys

2. Theory of enhanced bandgap non-parabolicity in GaNxAs1−x and related alloys

3. Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy

4. Evolution ofGaAs1−xNxconduction states and giantAu/GaAs1−xNxSchottky barrier reduction studied by ballistic electron emission spectroscopy

5. Electrical depth profile of p-type GaAs/Ga(As, N)/GaAs heterostructures determined by capacitance–voltage measurements

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal annealing effect on GaNAs epilayers with different nitrogen compositions grown by MOCVD;Journal of Crystal Growth;2007-09

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