Thermal annealing effect on GaNAs epilayers with different nitrogen compositions grown by MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Pseudopotential theory of dilute III V nitrides
2. Evidence for type I band alignment in GaNAs/GaAs quantum structures by optical spectroscopies
3. Electrooptical properties of GaNAs/GaAs multiple quantum well structures
4. Influence of nitrogen resonant states on the electronic structure of GaNxAs1−x
5. Properties of GaAsN/GaAs quantum wells studied by optical detection of cyclotron resonance
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2. GaAsBi: From Molecular Beam Epitaxy Growth to Devices;physica status solidi (b);2021-11-21
3. Redshift and blueshift of GaNAs/GaAs multiple quantum wells induced by rapid thermal annealing;Journal of Crystal Growth;2018-02
4. Effects of rapid thermal annealing on two-dimensional delocalized electronic states of the epitaxial N δ-doped layer in GaAs;Applied Physics Letters;2016-03-14
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