Evolution ofGaAs1−xNxconduction states and giantAu/GaAs1−xNxSchottky barrier reduction studied by ballistic electron emission spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.R7861/fulltext
Reference24 articles.
1. Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
2. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source
3. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys
4. III–V–N compounds for infrared applications
5. Bowing parameter of the band-gap energy of GaNxAs1−x
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