Room-temperature photoresponse of Schottky photodiodes based on GaNxAs1−x synthesized by ion implantation and pulsed-laser melting
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3500981
Reference13 articles.
1. Current status of research and development of III N V semiconductor alloys
2. Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements
3. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source
4. Enhanced nitrogen incorporation by pulsed laser annealing of GaNxAs1−x formed by N ion implantation
5. Synthesis of GaNxAs1−x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs
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1. The influence of dopant type and carrier concentration on the effective mass and Seebeck coefficient of GaNxAs1−x thin films;Applied Physics Letters;2011-08-15
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