The influence of dopant type and carrier concentration on the effective mass and Seebeck coefficient of GaNxAs1−x thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3626041
Reference24 articles.
1. Enhancement of Thermoelectric Efficiency in PbTe by Distortion of the Electronic Density of States
2. Enhancing the Thermoelectric Power Factor with Highly Mismatched Isoelectronic Doping
3. Band Anticrossing in GaInNAs Alloys
4. The optimal Seebeck coefficient for obtaining the maximum power factor in thermoelectrics
5. Minimum length scales for enhancement of the power factor in thermoelectric nanostructures
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1. First-principles predictions of the physical properties of GaNxAs1–x: Materials for futuristic optoelectronic devices;Pramana;2023-09-02
2. Thermoelectric transport of GaAs, InP, and PbTe: Hybrid functional with k · p ̃ interpolation versus scissor-corrected generalized gradient approximation;Journal of Applied Physics;2018-05-28
3. Many-body, Pauli blocking and carrier-impurity interaction effects on the band gap of aluminum doped zinc oxide thin films: A new method to evaluate both hole and electron effective masses of degenerate semiconductors;Current Applied Physics;2016-09
4. Silicon dopant passivation by nitrogen during molecular beam epitaxy of GaNAs;Applied Physics A;2015-05-17
5. Dilute nitride InNP quantum dots: Growth and photoluminescence mechanism;Applied Physics Letters;2014-10-27
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