Efficient polarization insensitive electroabsorption modulator using strained InGaAsP‐based quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111263
Reference10 articles.
1. New applications of a sinusoidally driven InGaAsP electroabsorption modulator to in-line optical gates with ASE noise reduction effect
2. Chapter 3 Optical Studies of Strained III-V Heterolayers
3. Observation of polarization independent electric field effect in InGaAs/InP tensile strained quantum well and its proposal for optical switch
4. Strained quantum wells for polarization-independent electrooptic waveguide switches
5. 10 Gbit/s operation of polarisation insensitive, strained InGaAsP/InGaAsP MQW electroabsorption modulator
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1. Microwave Photonics Components;Microwave Photonics;2003
2. Theoretical analysis of InGaAsP multiple-quantum-well electroabsorption modulators with both polarization insensitivity and negative chirp;Fourth International Conference on Thin Film Physics and Applications;2000-11-29
3. Theoretical Analysis of Polarization Insensitive InGaAsP Multiple-Quantum-Wells Eletroabsorption Modulators with Negative Chirp;Japanese Journal of Applied Physics;2000-11-15
4. Photoluminescence in GaAs and In0.7Ga0.3P single layers on InP;Solid State Communications;2000-06
5. Quantum well bandgap engineering for 1.5 μm telecom applications;Materials Science and Engineering: B;2000-05
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