10 Gbit/s operation of polarisation insensitive, strained InGaAsP/InGaAsP MQW electroabsorption modulator-Reference-Cited by-同舟云学术

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10 Gbit/s operation of polarisation insensitive, strained InGaAsP/InGaAsP MQW electroabsorption modulator

Published:1993 Issue:13 Volume:29 Page:1201
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Devaux F.,Chelles S.,Ougazzaden A.,Mircea A.,Huet F.,Carré M.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19930803?crawler=true&mimetype=application/pdf

Reference8 articles.

1. Marzin, J.Y., Voisin, P., and Brum, J.-A.: ‘Optical studies of strained III–V heterostructures’, Semiconductors and semimetals, (Academic Press 1990),32, p. 55–117

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dependence of the interband transitions on the in mole fraction and the applied electric field in InxGa1−xAs/In0.52Al0.48As multiple quantum wells;Applied Surface Science;2005-12

2. Extinction ratio improvement of an electroabsorption modulator by using Be as a p-type dopant with small diffusion coefficient;Journal of Applied Physics;2003-04

3. Extremely small-chirp electroabsorption-modulator integrated distributed feedback laser diode with a shallow quantum-well absorption layer;IEEE Journal of Quantum Electronics;2002-08

4. 1.55 µm Wavelength Strain-Compensated InxGa1-xAs/InyAl1-yAs Electroabsorption Modulators with High Extinction Ratio and Low Polarization-Dependent Loss;Japanese Journal of Applied Physics;2001-05-15

5. Electroabsorption modulator with PINIP structure;Electronics Letters;1998

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