Extinction ratio improvement of an electroabsorption modulator by using Be as a p-type dopant with small diffusion coefficient
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1559004
Reference6 articles.
1. 10 Gbit/s operation of polarisation insensitive, strained InGaAsP/InGaAsP MQW electroabsorption modulator
2. lambda /4-shifted DFB laser/electroabsorption modulator integrated light source for multigigabit transmission
3. Polarization-independent and ultra-high bandwidth electroabsorption modulator in multiquantum-well deep-ridge waveguide technology
4. Double zinc diffusion fronts in InP—Theory and experiment
5. Unintentional Redistribution of Zn in InGaAsP/InP Heterostructures
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Ga originated kink-and-tail Zn diffusion profiles in InGaAsP and InGaAlAs alloys during MOVPE regrowth;Journal of Crystal Growth;2017-12
2. The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE);Handbook of Crystal Growth;2015
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