Ion channeling investigation of the lattice location of Sn atoms in GaAs thin films grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103099
Reference11 articles.
1. Specific site location of S and Si in ion‐implanted GaAs
2. Nonalloyed Ohmic contacts ton‐GaAs by molecular beam epitaxy
3. Impurity profiles of GaAs epitaxial layers doped with Sn, Si, and Ge grown with molecular beam epitaxy
4. Surface segregation of Sn during MBE of n‐type GaAs established by SIMS and AES
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ion channeling study of lattice distortions in chromium-doped SrTiO3 crystals;Physics of the Solid State;2013-07
2. Negative persistent photoconductivity in GaAs (δ-Sn) structures;Journal of Experimental and Theoretical Physics;1999-12
3. Lattice location of N in ZnSe by channeling-NRA;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-10
4. Effects of a buffer layer on free-carrier depletion in n-type GaAs;IEEE Transactions on Electron Devices;1991-06
5. Substitutionality of Te- and Sn-relatedDXcenters inAlxGa1−xAs;Physical Review B;1991-01-15
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