Substitutionality of Te- and Sn-relatedDXcenters inAlxGa1−xAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.2462/fulltext
Reference17 articles.
1. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
2. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
3. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys
4. Theory of theDXcenter inAlxGa1−xAs and GaAs crystals
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Alloy splitting of Te-DX in AlxGa1−xAs analysis using the deep level transient spectroscopy technique;Microelectronics Journal;2006-07
2. Enhanced surface cation mobility on Sn delta‐doped (Ga,Al)As;Applied Physics Letters;1992-07-13
3. Vacancy-associated Te sites in GaAs;Physical Review B;1992-03-15
4. Magnetic circular dichroism of theDXcenter inAl0.35Ga0.65As:Te;Physical Review B;1992-03-15
5. Absence of dichroism for theDXoptical-bleaching transients inAl0.35Ga0.65As:Te;Physical Review B;1992-02-15
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