Absence of dichroism for theDXoptical-bleaching transients inAl0.35Ga0.65As:Te
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.3353/fulltext
Reference22 articles.
1. Deep donor levels (DXcenters) in III‐V semiconductors
2. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
3. Confirmation of large lattice relaxation of theDX center by extended photo-ionization cross-section measurements
4. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys
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1. DX-like centers in InAs∕GaAs QDIPs observed by polarization-dependent Fourier transform infrared spectroscopy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007
2. Alloy splitting of Te-DX in AlxGa1−xAs analysis using the deep level transient spectroscopy technique;Microelectronics Journal;2006-07
3. Metastability and lattice relaxation forD0andD−donor centers;Physical Review B;1998-06-15
4. Evidence for two Si-related DX like centers in AlxGa1−xAs and GaAs;Solid State Communications;1998-04
5. Time analyzed transient spectroscopy and multipleDXrelated emission centers in silicon doped AlxGa1−xAs;Journal of Applied Physics;1995-06
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