Theory of theDXcenter inAlxGa1−xAs and GaAs crystals
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.34.2664/fulltext
Reference23 articles.
1. Long‐lifetime photoconductivity effect inn‐type GaAlAs
2. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
3. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
4. Shallow and deep donors in direct-gapn-typeAlxGa1−xAs:Sigrown by molecular-beam epitaxy
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